Plasma Enhanced Atomic Layer Deposition of Ta-N films using TaF5 with N2/H2/Ar mixed gas plasma
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | KANG SANG WON | - |
| dc.date.accessioned | 2013-03-18T00:29:47Z | - |
| dc.date.available | 2013-03-18T00:29:47Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2004-02-01 | - |
| dc.identifier.citation | 5th International AVS Conference on Microelectronics and Interfaces, v., no., pp.107 - 109 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/143197 | - |
| dc.language | ENG | - |
| dc.title | Plasma Enhanced Atomic Layer Deposition of Ta-N films using TaF5 with N2/H2/Ar mixed gas plasma | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 107 | - |
| dc.citation.endingpage | 109 | - |
| dc.citation.publicationname | 5th International AVS Conference on Microelectronics and Interfaces | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | KANG SANG WON | - |
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.