Plasma Enhanced Atomic Layer Deposition of Ta-N films using TaF5 with N2/H2/Ar mixed gas plasma
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | KANG SANG WON | - |
| dc.date.accessioned | 2013-03-17T23:49:53Z | - |
| dc.date.available | 2013-03-17T23:49:53Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2004-08-01 | - |
| dc.identifier.citation | Atomic Layer Deposition (ALD) 2004, v., no., pp.0 - 0 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/142957 | - |
| dc.language | ENG | - |
| dc.title | Plasma Enhanced Atomic Layer Deposition of Ta-N films using TaF5 with N2/H2/Ar mixed gas plasma | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 0 | - |
| dc.citation.endingpage | 0 | - |
| dc.citation.publicationname | Atomic Layer Deposition (ALD) 2004 | - |
| dc.identifier.conferencecountry | Finland | - |
| dc.identifier.conferencecountry | Finland | - |
| dc.contributor.localauthor | KANG SANG WON | - |
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