A Study of LPE HgCdTe Wafer Characteristics Flattened with Single-Point Diamond Turning Methode

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dc.contributor.authorLee, YS-
dc.contributor.authorLee, Hee Chul-
dc.contributor.authorLee, MY-
dc.contributor.authorKim, YH-
dc.contributor.authorKim, GH-
dc.contributor.authorYang, SC-
dc.date.accessioned2013-03-17T23:19:16Z-
dc.date.available2013-03-17T23:19:16Z-
dc.date.created2012-02-06-
dc.date.issued2005-
dc.identifier.citation2005 Asia-Pacific Workshop on fundamentals and application of Advanced Semiconductor Devices, v., no., pp.O-1 - O-3-
dc.identifier.urihttp://hdl.handle.net/10203/142794-
dc.languageENG-
dc.titleA Study of LPE HgCdTe Wafer Characteristics Flattened with Single-Point Diamond Turning Methode-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpageO-1-
dc.citation.endingpageO-3-
dc.citation.publicationname2005 Asia-Pacific Workshop on fundamentals and application of Advanced Semiconductor Devices-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorLee, YS-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorLee, MY-
dc.contributor.nonIdAuthorKim, YH-
dc.contributor.nonIdAuthorKim, GH-
dc.contributor.nonIdAuthorYang, SC-
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EE-Conference Papers(학술회의논문)
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