The Nd-nanocluster coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Seo S.-Y. | - |
| dc.contributor.author | Shin J.H. | - |
| dc.date.accessioned | 2013-03-17T08:58:59Z | - |
| dc.date.available | 2013-03-17T08:58:59Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-04-21 | - |
| dc.identifier.citation | Optoelectronics of Group-IV-Based Materials, v.770, no., pp.125 - 130 | - |
| dc.identifier.issn | 0272-9172 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/141808 | - |
| dc.language | ENG | - |
| dc.title | The Nd-nanocluster coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-1542334783 | - |
| dc.type.rims | CONF | - |
| dc.citation.volume | 770 | - |
| dc.citation.beginningpage | 125 | - |
| dc.citation.endingpage | 130 | - |
| dc.citation.publicationname | Optoelectronics of Group-IV-Based Materials | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Seo S.-Y. | - |
| dc.contributor.nonIdAuthor | Shin J.H. | - |
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