New vapor-induced crystallization of amorphous Si using the transport of Al/Ni chlorides

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dc.contributor.authorEom, Ji Hye-
dc.contributor.authorLee, kye Ung-
dc.contributor.authorAhn, Byung Tae-
dc.date.accessioned2013-03-17T07:01:51Z-
dc.date.available2013-03-17T07:01:51Z-
dc.date.created2012-02-06-
dc.date.issued2004-10-03-
dc.identifier.citation2004 Joint International Meeting - 206th Meeting of the Electrochemical Society/2004 Fall Meeting of the Electrochemical Society of Japan,, v., no., pp.958 - 0-
dc.identifier.issn1091-8213-
dc.identifier.urihttp://hdl.handle.net/10203/140916-
dc.languageENG-
dc.titleNew vapor-induced crystallization of amorphous Si using the transport of Al/Ni chlorides-
dc.typeConference-
dc.identifier.scopusid2-s2.0-22244470450-
dc.type.rimsCONF-
dc.citation.beginningpage958-
dc.citation.endingpage0-
dc.citation.publicationname2004 Joint International Meeting - 206th Meeting of the Electrochemical Society/2004 Fall Meeting of the Electrochemical Society of Japan,-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorAhn, Byung Tae-
dc.contributor.nonIdAuthorEom, Ji Hye-
dc.contributor.nonIdAuthorLee, kye Ung-
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MS-Conference Papers(학술회의논문)
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