Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, S | - |
| dc.contributor.author | Yang, Kyounghoon | - |
| dc.date.accessioned | 2013-03-17T04:06:32Z | - |
| dc.date.available | 2013-03-17T04:06:32Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005 | - |
| dc.identifier.citation | International Conference on Solid State Devices and Materials, v., no., pp.208 - 209 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/139658 | - |
| dc.language | ENG | - |
| dc.title | Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 208 | - |
| dc.citation.endingpage | 209 | - |
| dc.citation.publicationname | International Conference on Solid State Devices and Materials | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | Kim, S | - |
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