DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, SK | ko |
dc.contributor.author | Lee, Hai-Woong | ko |
dc.date.accessioned | 2009-12-01T07:06:13Z | - |
dc.date.available | 2009-12-01T07:06:13Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-12 | - |
dc.identifier.citation | JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, v.77 | - |
dc.identifier.issn | 0031-9015 | - |
dc.identifier.uri | http://hdl.handle.net/10203/13822 | - |
dc.description.abstract | We investigate the origin of the resolution improvement beyond the classical diffraction limit in quantum lithography. We show that the degree of the resolution improvement persists even when the pure entangled state of light initially prepared (the NOON state) is transformed to a mixed entangled state caused by phase and amplitude damping, regardless of file degree of entanglement remaining in the state. We also show that the resolution improvement beyond the classical diffraction limit can be achieved with a particular class of separable states of light. The resolution improvement in this case can be traced to entanglement (of the NOON type) that may be considered to be embedded in the separable state. We conclude that it is the existence of entanglement (of the NOON type) in the state Of light used, not details of entanglement such a, the degree of entanglement and relative weight of entanglement in the state, that determines the degree of the resolution improvement in quantum lithography. The visibility of the pattern and the total deposition rate, however, depend oil the details of entanglement. | - |
dc.description.sponsorship | This research was supported by a Grant from Korea Research Institute for Standards and Science (KRISS). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | PHYSICAL SOC JAPAN | - |
dc.subject | INTERFEROMETRIC OPTICAL LITHOGRAPHY | - |
dc.subject | SUB-RAYLEIGH-RESOLUTION | - |
dc.subject | EXPLOITING ENTANGLEMENT | - |
dc.subject | DIFFRACTION LIMIT | - |
dc.subject | 2-PHOTON EXPOSURE | - |
dc.subject | STATES | - |
dc.subject | BEAT | - |
dc.title | The Role of Entanglement in Quantum Lithography | - |
dc.type | Article | - |
dc.identifier.wosid | 000262004800017 | - |
dc.identifier.scopusid | 2-s2.0-57549105702 | - |
dc.type.rims | ART | - |
dc.citation.volume | 77 | - |
dc.citation.publicationname | JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | - |
dc.identifier.doi | 10.1143/JPSJ.77.124001 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Hai-Woong | - |
dc.contributor.nonIdAuthor | Lee, SK | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | quantum lithography | - |
dc.subject.keywordAuthor | NOON state | - |
dc.subject.keywordAuthor | resolution improvement | - |
dc.subject.keywordPlus | INTERFEROMETRIC OPTICAL LITHOGRAPHY | - |
dc.subject.keywordPlus | SUB-RAYLEIGH-RESOLUTION | - |
dc.subject.keywordPlus | EXPLOITING ENTANGLEMENT | - |
dc.subject.keywordPlus | DIFFRACTION LIMIT | - |
dc.subject.keywordPlus | 2-PHOTON EXPOSURE | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | BEAT | - |
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