DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, Young-Hwan | ko |
dc.contributor.author | Jeon, Jun-Hyuck | ko |
dc.contributor.author | Seo, Seok-Jun | ko |
dc.contributor.author | Bae, Byeong-Soo | ko |
dc.date.accessioned | 2009-11-30 | - |
dc.date.available | 2009-11-30 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.9, pp.336 - 339 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/13619 | - |
dc.description.abstract | Thin-film transistors (TFTs) with aluminum indium oxide channel layers were fabricated via a simple and low cost solution process. The substitution of Al on In sites in the In(2)O(3) lattice was verified by X-ray diffraction analysis. The maximum heat-treatment temperature of these transistors was 350 degrees C, and the resultant thin films were highly transparent (with >90% transmittance). The fabricated TFTs operated in an enhancement mode on a positive bias and showed an n-type semiconductor behavior. They exhibited a channel mobility of 19.6 cm(2)/V s, a subthreshold slope of 0.3 V/decade, and an on-to-off current ratio greater than 10(8). | - |
dc.description.sponsorship | This research was financially supported by the Ministry of Knowledge Economy MKE and the Korea Industrial Technology Foundation KOTEF through the Human Resource Training Project for Strategic Technology. This work was also supported by a Korea Science and Engineering Foundation KOSEF grant funded by the Korean government MEST grant no. R11-2007-045-03002-0. Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | ZINC-OXIDE | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | TRANSPORT | - |
dc.subject | PROGRESS | - |
dc.subject | DEVICE | - |
dc.title | Solution-Processed, High Performance Aluminum Indium Oxide Thin-Film Transistors Fabricated at Low Temperature | - |
dc.type | Article | - |
dc.identifier.wosid | 000268064500027 | - |
dc.identifier.scopusid | 2-s2.0-67651227428 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 336 | - |
dc.citation.endingpage | 339 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.identifier.doi | 10.1149/1.3156830 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Bae, Byeong-Soo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | aluminium compounds | - |
dc.subject.keywordAuthor | heat treatment | - |
dc.subject.keywordAuthor | semiconductor thin films | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | transparency | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | PROGRESS | - |
dc.subject.keywordPlus | DEVICE | - |
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