High Quality RF Passive Integration using 35 um Thick Oxide Manufacturing Technology
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kwon, Young Se | - |
| dc.date.accessioned | 2013-03-16T20:08:17Z | - |
| dc.date.available | 2013-03-16T20:08:17Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2002 | - |
| dc.identifier.citation | ECTC, v., no., pp.1007 - 1011 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/135329 | - |
| dc.language | ENG | - |
| dc.title | High Quality RF Passive Integration using 35 um Thick Oxide Manufacturing Technology | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 1007 | - |
| dc.citation.endingpage | 1011 | - |
| dc.citation.publicationname | ECTC | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Kwon, Young Se | - |
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