Formation of electrically inactive nitrogen complex in Si oxynitride
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이은철 | - |
| dc.contributor.author | 장기주 | - |
| dc.date.accessioned | 2013-03-16T18:08:07Z | - |
| dc.date.available | 2013-03-16T18:08:07Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2002-10 | - |
| dc.identifier.citation | 한국물리학회 가을학술논문발표회, v., no., pp.530 - 530 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/134108 | - |
| dc.language | ENG | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Formation of electrically inactive nitrogen complex in Si oxynitride | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 530 | - |
| dc.citation.endingpage | 530 | - |
| dc.citation.publicationname | 한국물리학회 가을학술논문발표회 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 장기주 | - |
| dc.contributor.nonIdAuthor | 이은철 | - |
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