MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries
- Issue Date
- 2000
- Language
- ENG
- Citation
2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, pp.221 - 224
- Appears in Collection
- RIMS Conference Papers
- Files in This Item
- There are no files associated with this item.
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