240GHz fmax InP/InGaAs Single HBT fabrication and modeling
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Song, Y | - |
| dc.contributor.author | Kim, T | - |
| dc.contributor.author | Yoon, M | - |
| dc.contributor.author | 양경훈 | - |
| dc.date.accessioned | 2013-03-16T16:27:44Z | - |
| dc.date.available | 2013-03-16T16:27:44Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2002 | - |
| dc.identifier.citation | Korean Conference On Semiconductors, v., no., pp.21 - 22 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/133207 | - |
| dc.language | ENG | - |
| dc.title | 240GHz fmax InP/InGaAs Single HBT fabrication and modeling | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 21 | - |
| dc.citation.endingpage | 22 | - |
| dc.citation.publicationname | Korean Conference On Semiconductors | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 양경훈 | - |
| dc.contributor.nonIdAuthor | Song, Y | - |
| dc.contributor.nonIdAuthor | Kim, T | - |
| dc.contributor.nonIdAuthor | Yoon, M | - |
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