DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hyung-Cheol Shin | - |
dc.date.accessioned | 2013-03-16T16:12:27Z | - |
dc.date.available | 2013-03-16T16:12:27Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | The 6th International Conference on VLSI and Cad(ICVC'99), v., no., pp.233 - 236 | - |
dc.identifier.uri | http://hdl.handle.net/10203/133052 | - |
dc.language | ENG | - |
dc.title | Comparison of the characteristics of tunneling oxide and tunneling ON for P-channel Nano-crystal Memory | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 233 | - |
dc.citation.endingpage | 236 | - |
dc.citation.publicationname | The 6th International Conference on VLSI and Cad(ICVC'99) | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Hyung-Cheol Shin | - |
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