DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Giwan | - |
dc.date.accessioned | 2013-03-16T14:25:24Z | - |
dc.date.available | 2013-03-16T14:25:24Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-09 | - |
dc.identifier.citation | 25th Int`l Conf. on the Physics of Semiconductors, v., no., pp.755 - 755 | - |
dc.identifier.uri | http://hdl.handle.net/10203/132140 | - |
dc.language | ENG | - |
dc.title | Modeling and Simulation of FBAR devices Fabricated on Si | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 755 | - |
dc.citation.endingpage | 755 | - |
dc.citation.publicationname | 25th Int`l Conf. on the Physics of Semiconductors | - |
dc.contributor.localauthor | Yoon, Giwan | - |
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