RF characteristics of 30 nm MOSFETs with non-overlapped source-drain to gate
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | - |
| dc.date.accessioned | 2013-03-16T12:35:47Z | - |
| dc.date.available | 2013-03-16T12:35:47Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2002 | - |
| dc.identifier.citation | Silicon Nanoelectronics Workshop 2002, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/131330 | - |
| dc.language | ENG | - |
| dc.title | RF characteristics of 30 nm MOSFETs with non-overlapped source-drain to gate | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | Silicon Nanoelectronics Workshop 2002 | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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