Characteristics of InGaN/GaN light-emitting -diodes with Si-doped GaN contact layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jeong Yong | - |
| dc.date.accessioned | 2013-03-16T12:20:25Z | - |
| dc.date.available | 2013-03-16T12:20:25Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2001-07-01 | - |
| dc.identifier.citation | 4th International Conference on Nitride Semiconductors, v., no., pp.0 - 0 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/131240 | - |
| dc.language | ENG | - |
| dc.title | Characteristics of InGaN/GaN light-emitting -diodes with Si-doped GaN contact layer | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 0 | - |
| dc.citation.endingpage | 0 | - |
| dc.citation.publicationname | 4th International Conference on Nitride Semiconductors | - |
| dc.contributor.localauthor | Lee, Jeong Yong | - |
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