The Characteristics of tantalum nitride films Deposited by plasma enhanced atomic layer deposition using hydrogen radical as reduced agent
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kang, Sang-Won | ko |
| dc.date.accessioned | 2013-03-16T11:57:54Z | - |
| dc.date.available | 2013-03-16T11:57:54Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2001-05 | - |
| dc.identifier.citation | The Second Asian Conference on Chemical Vapor Deposition | - |
| dc.identifier.uri | http://hdl.handle.net/10203/131050 | - |
| dc.language | English | - |
| dc.publisher | Asian Conference on Chemical Vapor Deposition | - |
| dc.title | The Characteristics of tantalum nitride films Deposited by plasma enhanced atomic layer deposition using hydrogen radical as reduced agent | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The Second Asian Conference on Chemical Vapor Deposition | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Gyeongju, Korea | - |
| dc.contributor.localauthor | Kang, Sang-Won | - |
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