DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jeong Yong | ko |
dc.date.accessioned | 2013-03-16T10:57:22Z | - |
dc.date.available | 2013-03-16T10:57:22Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-11-01 | - |
dc.identifier.citation | The 10th Seoul International Symposium on the Physics of Semiconductors and Applications, pp.227 - 228 | - |
dc.identifier.uri | http://hdl.handle.net/10203/130582 | - |
dc.language | English | - |
dc.publisher | ISPSA | - |
dc.title | Formation of misfit dislocations in high indium content InxGa1-xN grown on GaN | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 227 | - |
dc.citation.endingpage | 228 | - |
dc.citation.publicationname | The 10th Seoul International Symposium on the Physics of Semiconductors and Applications | - |
dc.identifier.conferencecountry | KO | - |
dc.identifier.conferencelocation | Jeju Island | - |
dc.contributor.localauthor | Lee, Jeong Yong | - |
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