Properties of polysilicon films oxidized in inductively coupled plasma and its effect on thin-film transistors

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dc.contributor.authorChoi, Yong Wooko
dc.contributor.authorAhn, Jin Hyungko
dc.contributor.authorAhn, Byung Taeko
dc.date.accessioned2013-03-16T10:46:21Z-
dc.date.available2013-03-16T10:46:21Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-04-04-
dc.identifier.citationThe 1999 MRS Spring Meeting - Symposium B 'Flat-Panel Displays and Sensors-Principles, Materials and Processes', pp.205 - 210-
dc.identifier.issn0272-9172-
dc.identifier.urihttp://hdl.handle.net/10203/130500-
dc.languageEnglish-
dc.publisherMRS-
dc.titleProperties of polysilicon films oxidized in inductively coupled plasma and its effect on thin-film transistors-
dc.typeConference-
dc.identifier.wosid000088056900029-
dc.identifier.scopusid2-s2.0-0033721662-
dc.type.rimsCONF-
dc.citation.beginningpage205-
dc.citation.endingpage210-
dc.citation.publicationnameThe 1999 MRS Spring Meeting - Symposium B 'Flat-Panel Displays and Sensors-Principles, Materials and Processes'-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationSan Francisco, CA, USA-
dc.contributor.localauthorAhn, Byung Tae-
dc.contributor.nonIdAuthorChoi, Yong Woo-
dc.contributor.nonIdAuthorAhn, Jin Hyung-
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MS-Conference Papers(학술회의논문)
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