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Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature Basu, S.; Lee, Bong Jae; Zhang, Z. M., JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, v.132, no.2, 2010-02 |
Phosphorus implantation into in situ doped Ge-on-Si for high light-emitting efficiency Baek, Jiwoong; Ki, Bugeun; Kim, Daeik; Lee, Chulwon; Nam, Donguk; Cho, Yong-Hoon; Oh, Jungwoo, OPTICAL MATERIALS EXPRESS, v.6, no.9, pp.2939, 2016-09 |
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