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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

A study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV techniqueA study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorGuan, H-
dc.contributor.authorLi, MF-
dc.contributor.authorHe, YD-
dc.contributor.authorXu, Z-
dc.contributor.authorDong, Z-
dc.date.accessioned2013-03-16T09:15:00Z-
dc.date.available2013-03-16T09:15:00Z-
dc.date.created2012-02-06-
dc.date.issued1999-07-05-
dc.identifier.citationthe 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits, v., no., pp.81 - 81-
dc.identifier.urihttp://hdl.handle.net/10203/129749-
dc.languageENG-
dc.titleA study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique-
dc.title.alternativeA study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage81-
dc.citation.endingpage81-
dc.citation.publicationnamethe 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorGuan, H-
dc.contributor.nonIdAuthorLi, MF-
dc.contributor.nonIdAuthorHe, YD-
dc.contributor.nonIdAuthorXu, Z-
dc.contributor.nonIdAuthorDong, Z-
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EE-Conference Papers(학술회의논문)
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