DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Guan, H | - |
dc.contributor.author | Li, MF | - |
dc.contributor.author | He, YD | - |
dc.contributor.author | Xu, Z | - |
dc.contributor.author | Dong, Z | - |
dc.date.accessioned | 2013-03-16T09:15:00Z | - |
dc.date.available | 2013-03-16T09:15:00Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-07-05 | - |
dc.identifier.citation | the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits, v., no., pp.81 - 81 | - |
dc.identifier.uri | http://hdl.handle.net/10203/129749 | - |
dc.language | ENG | - |
dc.title | A study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique | - |
dc.title.alternative | A study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 81 | - |
dc.citation.endingpage | 81 | - |
dc.citation.publicationname | the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits | - |
dc.identifier.conferencecountry | Singapore | - |
dc.identifier.conferencecountry | Singapore | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Guan, H | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.contributor.nonIdAuthor | He, YD | - |
dc.contributor.nonIdAuthor | Xu, Z | - |
dc.contributor.nonIdAuthor | Dong, Z | - |
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