Surface treatment effects on the surface recombination velocity of ZnS/HgCdTe interface

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dc.contributor.authorChoi, JHko
dc.contributor.authorLee, Hee Chulko
dc.contributor.authorChoi, MSko
dc.date.accessioned2013-03-16T08:12:40Z-
dc.date.available2013-03-16T08:12:40Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-04-25-
dc.identifier.citationInfrared Detectors and Focal Plane Arrays VI, pp.390 - 396-
dc.identifier.urihttp://hdl.handle.net/10203/129220-
dc.languageEnglish-
dc.publisherSPIE-
dc.titleSurface treatment effects on the surface recombination velocity of ZnS/HgCdTe interface-
dc.typeConference-
dc.identifier.wosid000166173100041-
dc.identifier.scopusid2-s2.0-0033684792-
dc.type.rimsCONF-
dc.citation.beginningpage390-
dc.citation.endingpage396-
dc.citation.publicationnameInfrared Detectors and Focal Plane Arrays VI-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationOrlando, FL, USA-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorChoi, JH-
dc.contributor.nonIdAuthorChoi, MS-
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