The P-Channel Si Nano-Crystal Memory
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | ko |
| dc.date.accessioned | 2013-03-16T07:50:10Z | - |
| dc.date.available | 2013-03-16T07:50:10Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2001-10 | - |
| dc.identifier.citation | ICSICT 2001, pp.200 - 204 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/129037 | - |
| dc.language | English | - |
| dc.publisher | ICSICT | - |
| dc.title | The P-Channel Si Nano-Crystal Memory | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000174745900043 | - |
| dc.identifier.scopusid | 2-s2.0-84966577797 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 200 | - |
| dc.citation.endingpage | 204 | - |
| dc.citation.publicationname | ICSICT 2001 | - |
| dc.identifier.conferencecountry | CC | - |
| dc.identifier.conferencelocation | Shanghai | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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