DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, Hoi-Sung | ko |
dc.contributor.author | Kwon, Jung-Dae | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.date.accessioned | 2007-09-04T06:34:01Z | - |
dc.date.available | 2007-09-04T06:34:01Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.11, pp.C751 - C754 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1282 | - |
dc.description.abstract | TaN thin films were grown by plasma-enhanced atomic layer deposition using tantalum-pentafluoride (TaF5) as the metal precursor and N-2/H-2/Ar plasma as the reducing agent at a temperature of 350 degrees C. When the source pulse time exceeded 1.5 s, the thickness per cycle of TaN thin films was saturated at 0.41 angstrom/cycle and the resistivity was about 610 mu Omega cm. Under this condition, the TaN thin films had a high density (14.6 g/cm(3)), which was very close to the theoretical value (15.8 g/cm(3)), and fluorine or hydrogen impurities were below detection limit. The resistivity and N/Ta ratio of the TaN thin films increased with the plasma time, and did not saturate. In addition, increasing the N-2/H-2 ratio induced a sudden rise in the resistivity, which was related to the formation of a Ta3N5 phase. This dielectric phase was reduced by lowering the N-2/H-2 ratio. In addition, when H-2 plasma post-treatment was applied to the deposition process, the resistivity of the TaN thin films was reduced to 400 mu Omega cm. (c) 2006 The Electrochemical Society. | - |
dc.description.sponsorship | This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005- 005-J09702). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Electrochemical Soc Inc | - |
dc.subject | GROWTH | - |
dc.title | Plasma-enhanced atomic layer deposition of TaN thin films using tantalum-pentafluoride and N-2/H-2/Ar plasma | - |
dc.type | Article | - |
dc.identifier.wosid | 000241057000034 | - |
dc.identifier.scopusid | 2-s2.0-33749590944 | - |
dc.type.rims | ART | - |
dc.citation.volume | 153 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | C751 | - |
dc.citation.endingpage | C754 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.identifier.doi | 10.1149/1.2344834 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Chung, Hoi-Sung | - |
dc.contributor.nonIdAuthor | Kwon, Jung-Dae | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | GROWTH | - |
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