Dependence of the Boron-doped Microcrystalline SiC:H Film Characteristics on Mercury Bath and Substrate Temperatures in Photo-CVD System

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dc.contributor.authorLim, Koeng Su-
dc.contributor.authorMyong , SY-
dc.contributor.authorLee, HK-
dc.contributor.authorYoon, E-
dc.date.accessioned2013-03-16T05:55:10Z-
dc.date.available2013-03-16T05:55:10Z-
dc.date.created2012-02-06-
dc.date.issued1999-01-01-
dc.identifier.citationInternational Photovoltaic Science and Eng. Conference, v., no., pp.795 - 796-
dc.identifier.urihttp://hdl.handle.net/10203/128133-
dc.languageENG-
dc.titleDependence of the Boron-doped Microcrystalline SiC:H Film Characteristics on Mercury Bath and Substrate Temperatures in Photo-CVD System-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage795-
dc.citation.endingpage796-
dc.citation.publicationnameInternational Photovoltaic Science and Eng. Conference-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorLim, Koeng Su-
dc.contributor.nonIdAuthorMyong , SY-
dc.contributor.nonIdAuthorLee, HK-
dc.contributor.nonIdAuthorYoon, E-
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EE-Conference Papers(학술회의논문)
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