DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han K. | ko |
dc.contributor.author | Kim I. | ko |
dc.contributor.author | Shin H. | ko |
dc.date.accessioned | 2013-03-16T03:10:23Z | - |
dc.date.available | 2013-03-16T03:10:23Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-12-10 | - |
dc.identifier.citation | 2000 IEEE International Electron Devices Meeting, pp.309 - 312 | - |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.uri | http://hdl.handle.net/10203/126824 | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.title | Characteristics of p-channel Si nano-crystal memory | - |
dc.type | Conference | - |
dc.identifier.wosid | 000166855900071 | - |
dc.identifier.scopusid | 2-s2.0-0034453473 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 309 | - |
dc.citation.endingpage | 312 | - |
dc.citation.publicationname | 2000 IEEE International Electron Devices Meeting | - |
dc.identifier.conferencecountry | US | - |
dc.identifier.conferencelocation | San Francisco, CA | - |
dc.contributor.localauthor | Shin H. | - |
dc.contributor.nonIdAuthor | Han K. | - |
dc.contributor.nonIdAuthor | Kim I. | - |
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