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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy

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dc.contributor.authorWoo, J-
dc.contributor.authorHong, S-
dc.contributor.authorSetter, N-
dc.contributor.authorShin, H-
dc.contributor.authorJeon, JU-
dc.contributor.authorPak, YE-
dc.contributor.authorNo, Kwangsoo-
dc.date.accessioned2013-03-16T01:39:41Z-
dc.date.available2013-03-16T01:39:41Z-
dc.date.created2012-02-06-
dc.date.issued2000-08-14-
dc.identifier.citation13th International Vaccum Microelectronics Conference, v.19, no.3, pp.818 - 824-
dc.identifier.issn1071-1023-
dc.identifier.urihttp://hdl.handle.net/10203/126127-
dc.languageENG-
dc.titleQuantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy-
dc.typeConference-
dc.identifier.scopusid2-s2.0-0035326441-
dc.type.rimsCONF-
dc.citation.volume19-
dc.citation.issue3-
dc.citation.beginningpage818-
dc.citation.endingpage824-
dc.citation.publicationname13th International Vaccum Microelectronics Conference-
dc.identifier.conferencecountryChina-
dc.identifier.conferencecountryChina-
dc.contributor.localauthorNo, Kwangsoo-
dc.contributor.nonIdAuthorWoo, J-
dc.contributor.nonIdAuthorHong, S-
dc.contributor.nonIdAuthorSetter, N-
dc.contributor.nonIdAuthorShin, H-
dc.contributor.nonIdAuthorJeon, JU-
dc.contributor.nonIdAuthorPak, YE-
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MS-Conference Papers(학술회의논문)
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