Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in atomic force microscope based memory device
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | No, Kwangsoo | - |
| dc.contributor.author | Woo, J | - |
| dc.contributor.author | Hong, S | - |
| dc.date.accessioned | 2013-03-16T00:39:43Z | - |
| dc.date.available | 2013-03-16T00:39:43Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2000-01-01 | - |
| dc.identifier.citation | IEEE international symposium on the applications of ferroelectrics (ISAF 2000), v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/125644 | - |
| dc.language | ENG | - |
| dc.title | Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in atomic force microscope based memory device | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | IEEE international symposium on the applications of ferroelectrics (ISAF 2000) | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | No, Kwangsoo | - |
| dc.contributor.nonIdAuthor | Woo, J | - |
| dc.contributor.nonIdAuthor | Hong, S | - |
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