MCM technology for RF tunable band pass filters implemented by integration of GaAsFETs and selectively oxidized porous silicon (SOPS)
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee Jong-Soo | ko |
| dc.contributor.author | Ha Man-Lyun | ko |
| dc.contributor.author | Kwon, Young Se | ko |
| dc.date.accessioned | 2013-03-15T23:49:23Z | - |
| dc.date.available | 2013-03-15T23:49:23Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2000-05 | - |
| dc.identifier.citation | 50th Electronic Components and Technology Conference, pp.426 - 431 | - |
| dc.identifier.issn | 0569-5503 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/125240 | - |
| dc.language | English | - |
| dc.publisher | Electronic Components and Technology Conference | - |
| dc.title | MCM technology for RF tunable band pass filters implemented by integration of GaAsFETs and selectively oxidized porous silicon (SOPS) | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000088390200071 | - |
| dc.identifier.scopusid | 2-s2.0-0034476112 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 426 | - |
| dc.citation.endingpage | 431 | - |
| dc.citation.publicationname | 50th Electronic Components and Technology Conference | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Las Vegas, NV, USA | - |
| dc.contributor.localauthor | Kwon, Young Se | - |
| dc.contributor.nonIdAuthor | Lee Jong-Soo | - |
| dc.contributor.nonIdAuthor | Ha Man-Lyun | - |
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