Effect of process paramters on the uniformity in roughness and removal rate of wafer surface in the polishing process of silicon

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dc.contributor.authorKim, DoHyun-
dc.date.accessioned2013-03-15T21:27:48Z-
dc.date.available2013-03-15T21:27:48Z-
dc.date.created2012-02-06-
dc.date.issued1998-10-31-
dc.identifier.citationKyushu-Taejon/Chungnam symposium on chemical engineering, v., no., pp.25 - 26-
dc.identifier.urihttp://hdl.handle.net/10203/124067-
dc.languageENG-
dc.titleEffect of process paramters on the uniformity in roughness and removal rate of wafer surface in the polishing process of silicon-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage25-
dc.citation.endingpage26-
dc.citation.publicationnameKyushu-Taejon/Chungnam symposium on chemical engineering-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorKim, DoHyun-
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CBE-Conference Papers(학술회의논문)
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