Process and characterization of (Pb, La)TiO3 thin film deposited by MOCVD for gigabit DRAM application
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Ho Gi | - |
| dc.date.accessioned | 2013-03-15T20:52:42Z | - |
| dc.date.available | 2013-03-15T20:52:42Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997 | - |
| dc.identifier.citation | European meeting on integrated ferroelectrics, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/123758 | - |
| dc.language | ENG | - |
| dc.title | Process and characterization of (Pb, La)TiO3 thin film deposited by MOCVD for gigabit DRAM application | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | European meeting on integrated ferroelectrics | - |
| dc.contributor.localauthor | Kim, Ho Gi | - |
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