Analytical threshold voltage model for double-gate MOSFETs with localized charges
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kang, Hongki | ko |
| dc.contributor.author | Han, Jin-Woo | ko |
| dc.contributor.author | Choi, Yang-Kyu | ko |
| dc.date.accessioned | 2009-11-10T06:07:40Z | - |
| dc.date.available | 2009-11-10T06:07:40Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2008-08 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.29, no.8, pp.927 - 930 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/12350 | - |
| dc.description.abstract | An analytical threshold voltage model for double-gate MOSFETs with localized charges is developed. From the 2-D Poisson's equation with parabolic potential approximation, a compact threshold voltage model is derived. The proposed model is then verified with a 2-D device simulator. The model can be used to investigate hot-carrier-induced device degradation for various device dimensions and various charge distributions. | - |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Analytical threshold voltage model for double-gate MOSFETs with localized charges | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000258096000032 | - |
| dc.identifier.scopusid | 2-s2.0-48649092368 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 29 | - |
| dc.citation.issue | 8 | - |
| dc.citation.beginningpage | 927 | - |
| dc.citation.endingpage | 930 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.identifier.doi | 10.1109/LED.2008.2000965 | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Choi, Yang-Kyu | - |
| dc.contributor.nonIdAuthor | Kang, Hongki | - |
| dc.contributor.nonIdAuthor | Han, Jin-Woo | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | double-gate (DG) MOSFETs | - |
| dc.subject.keywordAuthor | hot-carrier effects (HCEs) | - |
| dc.subject.keywordAuthor | localized charge | - |
| dc.subject.keywordAuthor | surface potential | - |
| dc.subject.keywordAuthor | threshold voltage | - |
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 43 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.