DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Byung Tae | - |
dc.date.accessioned | 2013-03-15T19:16:57Z | - |
dc.date.available | 2013-03-15T19:16:57Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995 | - |
dc.identifier.citation | the 1995 International Conference on Solid State Devices and Materials (SSDM95), v., no., pp.902 - 904 | - |
dc.identifier.uri | http://hdl.handle.net/10203/122883 | - |
dc.language | ENG | - |
dc.title | New crystallization Process of LPCVD a- Si Films below 530 C Using Metal Adsorption Method | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 902 | - |
dc.citation.endingpage | 904 | - |
dc.citation.publicationname | the 1995 International Conference on Solid State Devices and Materials (SSDM95) | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
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