Properties of Phosphorus-Doped Microcrystalline Si Thin Films by PECVD
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ahn, Byung Tae | - |
| dc.date.accessioned | 2013-03-15T19:09:10Z | - |
| dc.date.available | 2013-03-15T19:09:10Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995 | - |
| dc.identifier.citation | Fabrication and Characterization of Advanced Matrials, Proc. of 3rd IUMRS International Conference in Asia, v., no., pp.1131 - 1136 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/122808 | - |
| dc.language | ENG | - |
| dc.title | Properties of Phosphorus-Doped Microcrystalline Si Thin Films by PECVD | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 1131 | - |
| dc.citation.endingpage | 1136 | - |
| dc.citation.publicationname | Fabrication and Characterization of Advanced Matrials, Proc. of 3rd IUMRS International Conference in Asia | - |
| dc.contributor.localauthor | Ahn, Byung Tae | - |
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