Si Etch Rate Calculation Using an Ion Energy Distribution Function of RF Biased LPHD Cl2 Plasma
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chang, Choong-Seock | - |
| dc.date.accessioned | 2013-03-15T17:11:43Z | - |
| dc.date.available | 2013-03-15T17:11:43Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1998 | - |
| dc.identifier.citation | Bulletin of American Physical Society, v., no., pp.1931 - 1932 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/121682 | - |
| dc.language | ENG | - |
| dc.title | Si Etch Rate Calculation Using an Ion Energy Distribution Function of RF Biased LPHD Cl2 Plasma | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 1931 | - |
| dc.citation.endingpage | 1932 | - |
| dc.citation.publicationname | Bulletin of American Physical Society | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Chang, Choong-Seock | - |
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