A medium energy ion scattering analysis of the Si-SiO2 interface formed by ion beam oxidation of silicon
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Si-Kyung | - |
| dc.contributor.author | Kim, YP | - |
| dc.contributor.author | Ha, YH | - |
| dc.contributor.author | Kim, SH | - |
| dc.contributor.author | Kim, HK | - |
| dc.contributor.author | Moon, DW | - |
| dc.date.accessioned | 2013-03-15T17:08:27Z | - |
| dc.date.available | 2013-03-15T17:08:27Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1996 | - |
| dc.identifier.citation | The 2rd international symposium on control of semiconductor interfaces, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/121655 | - |
| dc.language | ENG | - |
| dc.title | A medium energy ion scattering analysis of the Si-SiO2 interface formed by ion beam oxidation of silicon | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The 2rd international symposium on control of semiconductor interfaces | - |
| dc.contributor.localauthor | Choi, Si-Kyung | - |
| dc.contributor.nonIdAuthor | Kim, YP | - |
| dc.contributor.nonIdAuthor | Ha, YH | - |
| dc.contributor.nonIdAuthor | Kim, SH | - |
| dc.contributor.nonIdAuthor | Kim, HK | - |
| dc.contributor.nonIdAuthor | Moon, DW | - |
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