Electrical characteristics of n- and p-MOSFETs with N2O-reoxidized NH3-nitrided N2O oxides as gate dielectrics
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yoon, Giwan | - |
| dc.date.accessioned | 2013-03-15T16:54:33Z | - |
| dc.date.available | 2013-03-15T16:54:33Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995-04 | - |
| dc.identifier.citation | SPIE Microelectronic Device and Multilevel Interconnection Technology, v., no., pp.208 - 217 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/121539 | - |
| dc.language | ENG | - |
| dc.publisher | SPIE Microelectronic Device and Multilevel Interconnection Technology | - |
| dc.title | Electrical characteristics of n- and p-MOSFETs with N2O-reoxidized NH3-nitrided N2O oxides as gate dielectrics | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 208 | - |
| dc.citation.endingpage | 217 | - |
| dc.citation.publicationname | SPIE Microelectronic Device and Multilevel Interconnection Technology | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Yoon, Giwan | - |
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