Characterization of high quality nitrided gate dielectric films manufactured in reduced pressure furnace for ULSI CMOS applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yoon, Giwan | - |
| dc.date.accessioned | 2013-03-15T16:54:27Z | - |
| dc.date.available | 2013-03-15T16:54:27Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997-04 | - |
| dc.identifier.citation | Electrochemical Society Meeting Proceeding (Montreal, Canada), 1997 Spring, v., no., pp.418 - 429 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/121538 | - |
| dc.language | ENG | - |
| dc.publisher | Electrochemical Society Meeting Proceeding (Montreal, Canada), 1997 Spring | - |
| dc.title | Characterization of high quality nitrided gate dielectric films manufactured in reduced pressure furnace for ULSI CMOS applications | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 418 | - |
| dc.citation.endingpage | 429 | - |
| dc.citation.publicationname | Electrochemical Society Meeting Proceeding (Montreal, Canada), 1997 Spring | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Yoon, Giwan | - |
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