Highly Reliable Interpoly Oxide Using ECR N2O-Plasma for Next Generation Flash Memory
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chul-Hi Han | - |
| dc.date.accessioned | 2013-03-15T15:31:18Z | - |
| dc.date.available | 2013-03-15T15:31:18Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997 | - |
| dc.identifier.citation | The International Conference on Solid State Devices and Materials, v., no., pp.16 - 17 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/120788 | - |
| dc.language | ENG | - |
| dc.title | Highly Reliable Interpoly Oxide Using ECR N2O-Plasma for Next Generation Flash Memory | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 16 | - |
| dc.citation.endingpage | 17 | - |
| dc.citation.publicationname | The International Conference on Solid State Devices and Materials | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Chul-Hi Han | - |
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