DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Hee Chul | - |
dc.date.accessioned | 2013-03-15T15:20:47Z | - |
dc.date.available | 2013-03-15T15:20:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-09-01 | - |
dc.identifier.citation | , v., no., pp.0 - 0 | - |
dc.identifier.uri | http://hdl.handle.net/10203/120705 | - |
dc.language | ENG | - |
dc.title | The effect of annealing temperature on electrical properties of SBT/insulators/Si structure for MFIS in NDRO-type FRAM | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 0 | - |
dc.citation.endingpage | 0 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
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