MeV-(P+, B+, Si+) Ion-Induced-Damages and Secondary Defect Formations by Thermal Annealing in Silicon

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dc.contributor.authorLee, Jeong Yongko
dc.date.accessioned2013-03-15T13:52:38Z-
dc.date.available2013-03-15T13:52:38Z-
dc.date.created2012-02-06-
dc.date.issued1995-06-
dc.identifier.citationSecond Pacific Rim International Conference on Advanced Materials and Processing, pp.1297 - 1302-
dc.identifier.urihttp://hdl.handle.net/10203/119993-
dc.languageEnglish-
dc.publisherAdvanced Materials and Processing-
dc.titleMeV-(P+, B+, Si+) Ion-Induced-Damages and Secondary Defect Formations by Thermal Annealing in Silicon-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage1297-
dc.citation.endingpage1302-
dc.citation.publicationnameSecond Pacific Rim International Conference on Advanced Materials and Processing-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationKyongju, Korea-
dc.contributor.localauthorLee, Jeong Yong-
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MS-Conference Papers(학술회의논문)
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