Enhancement of Gas Flow Symmetry in the ICP Oxide Etcher

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dc.contributor.author정원영-
dc.contributor.author김도현-
dc.date.accessioned2013-03-15T13:02:08Z-
dc.date.available2013-03-15T13:02:08Z-
dc.date.created2012-02-06-
dc.date.issued1996-10-
dc.identifier.citation한국화학공학회 추계학술발표회, v.2, no.2, pp.2507 - 2510-
dc.identifier.urihttp://hdl.handle.net/10203/119685-
dc.languageKOR-
dc.titleEnhancement of Gas Flow Symmetry in the ICP Oxide Etcher-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.volume2-
dc.citation.issue2-
dc.citation.beginningpage2507-
dc.citation.endingpage2510-
dc.citation.publicationname한국화학공학회 추계학술발표회-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor김도현-
dc.contributor.nonIdAuthor정원영-
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CBE-Conference Papers(학술회의논문)
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