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Novel oxynitridation technology for highly reliable thin dielectricsNovel oxynitridation technology for highly reliable thin dielectrics

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorJoo, MS-
dc.contributor.authorLee, SH-
dc.contributor.authorLee, SK-
dc.contributor.authorKIm, JC-
dc.contributor.authorChoi, SH-
dc.date.accessioned2013-03-15T12:24:24Z-
dc.date.available2013-03-15T12:24:24Z-
dc.date.created2012-02-06-
dc.date.issued1995-06-07-
dc.identifier.citationSymp. on VLSI Tech., v., no., pp.107 - 107-
dc.identifier.urihttp://hdl.handle.net/10203/119439-
dc.languageENG-
dc.titleNovel oxynitridation technology for highly reliable thin dielectrics-
dc.title.alternativeNovel oxynitridation technology for highly reliable thin dielectrics-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage107-
dc.citation.endingpage107-
dc.citation.publicationnameSymp. on VLSI Tech.-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorJoo, MS-
dc.contributor.nonIdAuthorLee, SH-
dc.contributor.nonIdAuthorLee, SK-
dc.contributor.nonIdAuthorKIm, JC-
dc.contributor.nonIdAuthorChoi, SH-
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EE-Conference Papers(학술회의논문)
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