Pt deposition effect for the catalyst of the semiconducting oxygen sensor

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dc.contributor.authorCho Seong-Soon-
dc.contributor.authorKim, Ho Gi-
dc.date.accessioned2013-03-15T10:54:09Z-
dc.date.available2013-03-15T10:54:09Z-
dc.date.created2012-02-06-
dc.date.issued1996-08-18-
dc.identifier.citationProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), v.2, no., pp.983 - 986-
dc.identifier.urihttp://hdl.handle.net/10203/118809-
dc.languageENG-
dc.titlePt deposition effect for the catalyst of the semiconducting oxygen sensor-
dc.typeConference-
dc.identifier.scopusid2-s2.0-0030370998-
dc.type.rimsCONF-
dc.citation.volume2-
dc.citation.beginningpage983-
dc.citation.endingpage986-
dc.citation.publicationnameProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorKim, Ho Gi-
dc.contributor.nonIdAuthorCho Seong-Soon-
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