Improvement of Hg0.78Cd0.22Te diode characteristics by hydrogenation
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Y.H. | ko |
| dc.contributor.author | Bae, S.H. | ko |
| dc.contributor.author | Kim, C.K. | ko |
| dc.contributor.author | Lee, Hee Chul | ko |
| dc.date.accessioned | 2013-03-15T10:37:58Z | - |
| dc.date.available | 2013-03-15T10:37:58Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1998-07-19 | - |
| dc.identifier.citation | Proceedings of the 1998 Conference on Infrared Technology and Applications XXIV. Part 1 (of 2), pp.98 - 103 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/118720 | - |
| dc.language | English | - |
| dc.publisher | SPIE | - |
| dc.title | Improvement of Hg0.78Cd0.22Te diode characteristics by hydrogenation | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000077548500014 | - |
| dc.identifier.scopusid | 2-s2.0-0032294734 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 98 | - |
| dc.citation.endingpage | 103 | - |
| dc.citation.publicationname | Proceedings of the 1998 Conference on Infrared Technology and Applications XXIV. Part 1 (of 2) | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | San Diego, CA, USA | - |
| dc.contributor.localauthor | Lee, Hee Chul | - |
| dc.contributor.nonIdAuthor | Kim, Y.H. | - |
| dc.contributor.nonIdAuthor | Bae, S.H. | - |
| dc.contributor.nonIdAuthor | Kim, C.K. | - |
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