Resistivity, step coverage and barrier property of TiN/Ti films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Won-Jong | - |
| dc.date.accessioned | 2013-03-15T10:24:51Z | - |
| dc.date.available | 2013-03-15T10:24:51Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997-01-01 | - |
| dc.identifier.citation | Proceedings of ULSI XII : 1996 Advanced Metallization and Interconnect Systems for ULSI Applications, v., no., pp.297 - 303 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/118630 | - |
| dc.language | ENG | - |
| dc.title | Resistivity, step coverage and barrier property of TiN/Ti films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 297 | - |
| dc.citation.endingpage | 303 | - |
| dc.citation.publicationname | Proceedings of ULSI XII : 1996 Advanced Metallization and Interconnect Systems for ULSI Applications | - |
| dc.contributor.localauthor | Lee, Won-Jong | - |
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