Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim Ilgweon | ko |
| dc.contributor.author | Han Sangyeon | ko |
| dc.contributor.author | Kim Hyungsik | ko |
| dc.contributor.author | Lee Jongho | ko |
| dc.contributor.author | Choi Bumho | ko |
| dc.contributor.author | Hwang Sungwoo | ko |
| dc.contributor.author | Ahn Doyeol | ko |
| dc.contributor.author | Shin Hyungcheol | ko |
| dc.date.accessioned | 2013-03-15T10:00:24Z | - |
| dc.date.available | 2013-03-15T10:00:24Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1998-12-06 | - |
| dc.identifier.citation | Proceedings of the 1998 IEEE International Electron Devices Meeting, pp.111 - 114 | - |
| dc.identifier.issn | 0163-1918 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/118469 | - |
| dc.language | English | - |
| dc.publisher | IEEE | - |
| dc.title | Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000078581800025 | - |
| dc.identifier.scopusid | 2-s2.0-0032256628 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 111 | - |
| dc.citation.endingpage | 114 | - |
| dc.citation.publicationname | Proceedings of the 1998 IEEE International Electron Devices Meeting | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | San Francisco, CA, USA | - |
| dc.contributor.localauthor | Shin Hyungcheol | - |
| dc.contributor.nonIdAuthor | Kim Ilgweon | - |
| dc.contributor.nonIdAuthor | Han Sangyeon | - |
| dc.contributor.nonIdAuthor | Kim Hyungsik | - |
| dc.contributor.nonIdAuthor | Lee Jongho | - |
| dc.contributor.nonIdAuthor | Choi Bumho | - |
| dc.contributor.nonIdAuthor | Hwang Sungwoo | - |
| dc.contributor.nonIdAuthor | Ahn Doyeol | - |
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