Reducing Crystallization Temperature and Time of a LPCVD Amorphous Silicon Thin in Al/Amorphous Si Structure
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jeong Yong | - |
| dc.date.accessioned | 2013-03-15T09:56:54Z | - |
| dc.date.available | 2013-03-15T09:56:54Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1996-02-01 | - |
| dc.identifier.citation | 3rd Korean Conference of Semiconductors, v., no., pp.0 - 0 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/118451 | - |
| dc.language | KOR | - |
| dc.title | Reducing Crystallization Temperature and Time of a LPCVD Amorphous Silicon Thin in Al/Amorphous Si Structure | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 0 | - |
| dc.citation.endingpage | 0 | - |
| dc.citation.publicationname | 3rd Korean Conference of Semiconductors | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Lee, Jeong Yong | - |
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