A nano-structure Memory with SOI Edge channel and A nano dot
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | - |
| dc.date.accessioned | 2013-03-15T08:02:24Z | - |
| dc.date.available | 2013-03-15T08:02:24Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1998 | - |
| dc.identifier.citation | MNC(Microproceses and Nanotechnology Conference), v., no., pp.315 - 316 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/117639 | - |
| dc.language | ENG | - |
| dc.title | A nano-structure Memory with SOI Edge channel and A nano dot | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 315 | - |
| dc.citation.endingpage | 316 | - |
| dc.citation.publicationname | MNC(Microproceses and Nanotechnology Conference) | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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