The effects of the addition of CF4, Cl2 and N2 to oxygen ECR plasma on the etch rates, selectivities, and etched profiles of RuO2 films
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Won-Jong | - |
| dc.contributor.author | LEE, EJ | - |
| dc.contributor.author | Kim, JS | - |
| dc.contributor.author | Kim, JW | - |
| dc.contributor.author | Baik, KH | - |
| dc.date.accessioned | 2013-03-15T07:09:59Z | - |
| dc.date.available | 2013-03-15T07:09:59Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997-01-01 | - |
| dc.identifier.citation | Proceedings of the Materials Research Society Symposium, v., no., pp.183 - 188 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/117235 | - |
| dc.language | ENG | - |
| dc.title | The effects of the addition of CF4, Cl2 and N2 to oxygen ECR plasma on the etch rates, selectivities, and etched profiles of RuO2 films | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 183 | - |
| dc.citation.endingpage | 188 | - |
| dc.citation.publicationname | Proceedings of the Materials Research Society Symposium | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Lee, Won-Jong | - |
| dc.contributor.nonIdAuthor | LEE, EJ | - |
| dc.contributor.nonIdAuthor | Kim, JS | - |
| dc.contributor.nonIdAuthor | Kim, JW | - |
| dc.contributor.nonIdAuthor | Baik, KH | - |
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